Cov khoom siv semiconductor feem ntau siv los ua LEDs
Lub teeb ci ntawm LED yog PN kev sib tshuam, nws ua li cas? Dab tsi yog cov khoom siv semiconductor feem ntau siv los ua LEDs?
Cov qauv tseem ceeb ntawm lub teeb-emitting diode yog semiconductor PN kev sib tshuam. Thaum ib qho hluav taws xob rau pem hauv ntej siv rau PN kev sib tshuam, cov neeg nqa khoom tsawg tau txhaj tshuaj, thiab kev sib txuas ntawm cov neeg nqa khoom tsawg yog qhov ua haujlwm ntawm lub teeb-emitting diode. PN hlws ris yog hais txog cov qauv nrog thaj tsam P thiab N nyob ib sab hauv ib qho siv lead ua. Nws feem ntau yog tsim los ntawm diffusion, ion implantation los yog kev loj hlob ntawm ib tug siv lead ua ntawm ib hom conductivity los tsim ib tug nyias txheej ntawm lwm yam conductivity. txheej yog ua. Yog tias silicon carbide xiav LED tau tsim los ntawm ion implantation, GaAs, GaAs0.60P0.40/GaAs{{10} }.35P0.65: N/GaP, GaAs0.15P0.85: N/GaP, GaP: ZnO/GaP tau tsim los ntawm diffusion method Infrared, liab, txiv kab ntxwv, daj, liab LEDs, thaum GaAlAs, InGaN, InGaAlP ultra-siab brightness LEDs yog tag nrho cov ua los ntawm kev loj hlob junctions, GaAs, GaP: ZnO / GaP thiab GaP: N / GaP LEDPN junctions kuj yog ua nrog loj junctions. Piv nrog rau txoj kev diffusion thiab ion implantation txoj kev, txoj kev loj hlob junction yog feem ntau overcompensated los ua ib tug PN hlws ris, thiab cov impurities tsis siv ntau dhau, ua rau txo qis hauv cov khoom siv lead ua zoo, nce qhov tsis xws luag, thiab nce kev siv. ntawm non-radiative recombination, ua rau txo qis hauv luminous efficiency.
Cov khoom siv semiconductor feem ntau siv los tsim cov LEDs feem ntau suav nrog III-V cov khoom siv semiconductor xws li gallium arsenide, gallium phosphide, gallium aluminium arsenide, gallium arsenide phosphorus, indium gallium nitride, indium gallium aluminium phosphorus, thiab lwm yam, nrog rau pawg IV compound. semiconductors. Silicon carbide, pab pawg II-VI compound zinc selenide, thiab lwm yam.
